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Gallium Nitride (GaN) Semiconductor Devices Market Size Report, 2025

Gallium Nitride (GaN) Semiconductor Devices Market Size & Forecast Report, 2014 - 2025

Report ID: MN17617277  |  Published: November 2017  |  No of Pages: 126
Format: Electronic (PDF)  |  Industry: Semiconductor  |  Publisher: Grand View Research

Global Gallium Nitride (GaN) Semiconductor Devices Market is projected to grow considerably in the forecast period owing to the increasing demand for energy efficient power electronics. Gallium Nitride is a semiconductor used in the production of semiconductor power devices, RF (Radio Frequency) components and light emitting diodes (LEDs). Gallium nitride has the potential to act as displacement technology for silicon conductors in power consumption, analog applications and radio frequency components. GaN semiconductors hold dynamic chemical and electrical properties like high-voltage breakdown and saturation velocity that make the semiconductors perform proficiently in different switching devices.

The key factors that drive the growth of gallium nitride (GaN) semiconductor devices industry comprise the wide band gap feature of gallium nitride material that encourages innovative applications, the vast market for gallium nitride in consumer electronics and automotive devices, success of gallium nitride in radio frequency power electronics. Gallium nitride (GaN) semiconductor devices are broadly used in industries like defense, military, aerospace, telecommunication and medical sectors. GaN is also extensively used in blue light-emitting diodes and blue laser diodes in Blu-ray disc players which contributes to the growth of the market.

The wide band gap semiconductor material, Gallium nitride has the ability to operate at high temperature, high power density, and high frequency along with other operating voltages, driving the growth of the market. The rising penetration of gallium nitride in radio frequency power application is predicted to be a major growth driver for gallium nitride semiconductor devices market in future. The RF based switching is growing widely in the developed electrical energy systems especially in the renewable energy like solar power. Besides the reliability factor, gallium nitride (GaN) semiconductor devices play an important role in reducing overall system costs. Conversely, gallium nitride lacks cost effectiveness in applications with low gigahertz like CATV (community access television) which reduces the market penetration. This is expected to hinder the growth of the industry to some extent.

Nevertheless, the rise in demand for wireless devices, the speedy progress of automated devices and cost effective manufacturing is predicted to drive the gallium nitride semiconductor devices industry in the years to come. Conversely, the waste created during the manufacturing of gallium nitride (GaN) semiconductor is a serious issue to human health like human skin, eyes and lungs which ultimately increases the shielding outfit expenses for manufacturing needs which are projected to obstruct the market growth in the coming years.

Gallium nitride (GaN) semiconductor devices market is categorized on the basis of product, device, application and geography. On the basis of product, the market is divided into opto-semiconductors and power semiconductors. The power semiconductors are estimated to hold larger share of the market due to its ability to minimize power loss and obtain high speed switching with features like miniaturization, high speed switching and high breakdown voltage.

In terms of device, gallium nitride (GaN) semiconductor devices industry is divided into GAN Power Discrete Market, GAN Power Transistors Market, GAN Diodes & Rectifiers Market, and GAN Power ICs Market. On the basis of application, the market is segmented into Computers, Industrial power, solar, and wind sectors (IPSW), Consumer Electronics sector, Automotive sector, Military, Defense, Aerospace and Medical sector. Consumer electronic sector is projected to dominate the market owing to the high penetration of gallium nitride in LED-based lighting and LED-based display.

Geographically, gallium nitride (GaN) semiconductor devices market is segmented as North America, Asia Pacific, Europe and RoW. North America is expected to dominate larger share of the market due to the increasing demand for LEDs in consumer electronic products like gaming devices, personal computers, laptops, tablets, etc. Asia Pacific region is also estimated to witness faster growth due to the presence of large number of raw material suppliers in this region.

The prominent gallium nitride (GaN) semiconductor devices industry players profiled here are Aixtron SE, Cree Incorporated, Panasonic Semiconductors, Texas Instruments, Fujitsu Ltd, RF Micro Devices Corporation, Toshiba, Infineon Technologies, OsramOpto-semiconductors, Gallia Semiconductor, ROHM Company Ltd. NXP Semiconductors, Koninklijke Philips N.V., Qorvo and Nichia Corporation.

Market Segment:

Product Scope (Revenue, USD Million; 2014 - 2025)
    • GaN Radio Frequency Devices
    • Opto-semiconductors
    • Power Semiconductors

Wafer Scope (Revenue, USD Million; 2014 - 2025)
    • 2 inch
    • 4 inch
    • 6 inch
    • 8 inch

Application Outlook (Revenue, USD Million; 2014 - 2025)
    • Automotive
    • Consumer Electronics
    • Defense & Aerospace
    • Healthcare
    • Information & Communication Technology
    • Industrial & Power
    • Others

Regional Outlook (Revenue, USD Million; 2014 - 2025)
    • North America
        • U.S.    
        • Canada
    • Europe
        • UK
        • Germany
    • Asia Pacific
        • China
        • Japan
        • India
    • Latin America
        • Brazil
    • Middle East & Africa (MEA)

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