High-k and ALD CVD Metal Precursors Market Analysis Report By Technology, By Region And Segment Forecasts From 2019 To 2025

Industry Insights

The global high-k and ALD CVD metal precursors market size was accounted for 456.5 million in 2018. It is anticipated to propel at the CAGR of over 8.3% from 2019 to 2025. Organic composites in metal having lower thermal stability are a key factor boosting the market growth. Companies invest in R&D activities to enhance the metallization process of copper, which is projected to increase the need for dielectric precursors and metal firms deposition.

Increasing demand for large data and access is driving the need for materials having greater dielectric value. The research sector with rising demand for the Atomic Layer Deposition (ALD) process of rhodium, platinum, palladium, ruthenium, and iridium is projected to bolster market growth. In addition, increasing need for thin-film metals especially in the industrial sector is also expected to positively impact market growth.

In the CVD process, designing and selection of proper metal precursors play a vital role in developing metal with high efficiency. In the semiconductor industry, buyer favors insulators which have high-dielectric values. Thus, the metal precursors including cobalt, tantalum, titanium, zirconium, tungsten, and aluminum with greater high-dielectric value are growing in demand.

In the non-semiconductor sector, the development in the ALD field is projected to proliferate the demand for metal precursors especially in the manufacturing of thin films. ALD process helps in designing ultra-thin film to some nanometers. Additionally, ALD provides high thickness control for the deposition of high-scale structures.

An appropriate metal precursor is necessary in MOSFETs and other micro-scaled semiconductor devices. These devices require lower deposition temperature and thin films. Deposition techniques with high-temperature may cause non-uniformity in layers, reduced adhesion, and variation in crystallinity & morphology.

Technology Insights

Based on the technology, the high-k and ALD/CVD metal precursors market is split into capacitors, gates, and interconnect. High dielectric valued precursors are used for capacitor, and gates manufacturing. Metal precursor is required for creating interconnects and electrodes. Gates type segment is projected to grow at a fastest CAGR of around 13.1% during the forecasted period. Several research activities are carried out for making thin films by the use of elements such as HfO2, ZrO2, Ta205, and AI203 for DRAM field designs, and other interconnects.

Interconnect involve fabrication process that uses Aluminum (AI), and Copper (Cu). It is also used for making barrier of metal layered for protection of Silicon (Si) in integrated circuits. High-dielectric layer is prevalent to DRAMs, metal-insulator-metal capacitors, OLEDs, and thin-film transistor devices.

In transistor devices, gate leakage can be reduced by cutting down scale of transistor size to below 1 nm using metal gate & high-k dielectric technologies. Semiconductor firms designs metal gate stacks with high-k value using CMOS technology by scaling down sizes to 45.0 nm. Intel uses technology that provides high-k for gate and improved channel strain.

Regional Insights

In 2018, Asia Pacific led the market with revenue of USD 293.6 million in the overall market. Growing demand for microelectronic devices and high outsourcing for electronic products especially from China is mainly contributing to market growth. Furthermore, increasing need for semiconductors across countries such as India, Russia, China, and Brazil, with rising demand for low cost products is boosting the market growth.

In U.S., rising research activities involved in nanotechnology is proliferating the demand for semiconductor devices. Additionally, growing demand for 3D stack ICs structure with high cost-effectiveness due to application of ALD is fostering market growth.

COVID-19 Impact Insights

The COVID-19 crisis has its significant impact on global high-k and ALD/CVD metal precursors market. During the lockdown, several metal manufacturers have faced challenges such as lack of workforce, supply chain interruption in acquiring metals including copper, aluminum, and titanium, among others.

In addition, slowdown in electronics, automotive industry is also projected to hamper the market growth. During the first quarter 2020, in China the prices of metal precursors have witnessed a decline owing to delay in purchase orders, and production demand. Thus, the manufacturers are focusing on collecting raw materials, and resources from local players.

High-k and ALD CVD Metal Precursors Market Share Insights

Leading players in the market include Praxair, AFC Hitech, Air Products and Chemicals, Air Liquide, and Merck KGaAS. Key players in market engage in strategic partnerships and acquisitions to increase their sales across the globe. For example, Merck KGaA has acquired company called Sigma-Aldrich to expand their product portfolio.

Beneq, an ALD service provider has partnered with Centre for Process Innovation for developing ALD techniques. 

Report Scope

Segments Covered in the Report

This report forecasts revenue growth at global, regional, and country levels and provides an analysis on the latest industry trends and opportunities in each of the sub-segments from 2014 to 2025. For the purpose of this study, Million Insights has segmented the global high-k and ALD CVD metal precursors market report on the basis of technology, and region:

• Technology Outlook (Revenue, USD Million, 2015 - 2025)
    • Interconnect
    • Capacitors
    • Gates

• Regional Outlook (Revenue, USD Million, 2015 - 2025)
    • North America
        • U.S.
        • Canada
    • Europe
        • U.K.
        • Germany
    • Asia Pacific
        • China
        • Japan
        • India
    • Latin America
        • Brazil
        • Mexico
    • Middle East & Africa (MEA)